Infineon OptiMOS N-Channel MOSFET, 161 A, 40 V N, 8-Pin TDSON BSC019N04LSATMA1

RS 제품 번호:: 258-0682
제조사 부품 번호:: BSC019N04LSATMA1
제조업체:: Infineon

Infineon OptiMOS N-Channel MOSFET, 161 A, 40 V N, 8-Pin TDSON BSC019N04LSATMA1

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Subtotal (1 reel of 5000 units)*

₩4,700,000.00

일시적 품절

2026년 12월 30일 부터 배송

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수량	한팩당	릴당*
5000 - 5000	₩940.00	₩4,698,000.00
10000 - 10000	₩920.00	₩4,604,000.00
15000 +	₩902.00	₩4,512,000.00

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RS 제품 번호:: 258-0682
제조사 부품 번호:: BSC019N04LSATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	161A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.20mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	78W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS, IEC 61249-2-21
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 161A
	Maximum Drain Source Voltage Vds 40V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.20mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 78W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS, IEC 61249-2-21
	Automotive Standard No

Datasheet - BSC019N04LSATMA1

Infineon OptiMOS Series MOSFET, 40V Maximum Drain-Source Voltage, 161A Maximum Continuous Drain Current - BSC019N04LSATMA1

This MOSFET is a surface-mount N‑channel power transistor designed for high-current switching in Compact assemblies. It operates across a wide ambient range and is suited to thermally stressed environments. The device offers low conduction losses and is supplied in an eight-pin TDSON package for dense board layouts.

Features and Benefits:

• 1.20mΩ Rds(on) reduces conduction losses for efficiency
• 78W power dissipation supports sustained high-power operation
• 21 nC gate charge enables controlled switching transitions
• ±20V gate rating tolerates robust drive voltages
• -55°C to +175°C range allows extreme temperature endurance

Applications

• Suitable for high-current DC-DC conversion stages
• Ideal for synchronous rectification in power supplies
• Used with MOSFET drivers in motor-control inverters
• Can be used for server and telecoms power distribution
• Suitable for Compact surface-mount power modules

What package type facilitates Compact board layouts?

It is supplied in an eight-pin TDSON surface-mount package that saves board area and eases thermal interfacing.

How does the device handle high continuous currents?

The transistor supports a continuous drain current of 161A, enabling sustained high-current switching when mounted with appropriate thermal management.

What standards and material restrictions apply to the component?

The device meets RoHS requirements and follows IEC 61249-2-21 material specifications.

What is the maximum volt capability between drain and source?

The maximum permissible drain-source voltage is 40V, defining its safe operating voltage boundary.

What channel configuration does the transistor use?

It uses an N‑channel configuration suited to low-side or synchronous switching topologies.