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Infineon HEXFET N-Channel MOSFET, 63 A, 100 V Enhancement TO-252 IRLR3110ZTRPBF

RS 제품 번호:: 257-9452
제조사 부품 번호:: IRLR3110ZTRPBF
제조업체:: Infineon

Infineon HEXFET N-Channel MOSFET, 63 A, 100 V Enhancement TO-252 IRLR3110ZTRPBF

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Subtotal (1 reel of 2000 units)*

₩2,440,000.00

추가로 2026년 10월 26일 부터 2,000 개 단위 배송

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수량	한팩당	릴당*
2000 - 4000	₩1,220.00	₩2,442,000.00
6000 +	₩1,196.00	₩2,393,200.00

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RS 제품 번호:: 257-9452
제조사 부품 번호:: IRLR3110ZTRPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	63A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	16mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 63A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series HEXFET
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 16mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRLR3110ZTRPBF

Infineon HEXFET Series MOSFET, 100V Maximum Drain‑Source Voltage, 63A Maximum Continuous Drain Current - IRLR3110ZTRPBF

This MOSFET is a through‑hole power transistor designed for switching and power‑management roles in circuits requiring high current handling and elevated temperature endurance. It operates as an N‑channel enhancement device rated for medium‑voltage applications and is intended for installations where a TO‑252 package and straightforward PCB mounting are preferred.

Features and Benefits:

• 16mΩ Rds(on) reduces conduction losses during high current flow
• 100V Vds supports medium‑voltage switching applications
• 63A continuous drain current enables sustained heavy‑load operation
• -55°C to +175°C temperature range permits high‑temperature deployment
• 1.3V forward gate voltage allows efficient gate‑drive performance

Applications

• Suitable for DC power conversion stages in industrial equipment
• Ideal for motor‑drive switching in Compact assemblies
• Used with power supplies requiring high current throughput
• Can be used for battery management in high‑load systems
• Appropriate for thermal‑stress testing fixtures and rigs

What package type does it use for board mounting?

It is supplied in a TO‑252 package configured for through‑hole mounting, facilitating mechanical stability and heat dissipation.

What channel behaviour should designers expect?

It functions as an enhancement‑mode N‑channel transistor, requiring a positive gate‑to‑source drive for conduction.

How does temperature capability affect deployment?

The device is specified to operate across a -55°C to +175°C span, allowing use in environments with substantial thermal variation.

Is this component suitable for automotive‑standard projects?

The part is not designated to automotive standards and should not be assumed to meet those specific qualification criteria.