Infineon HEXFET Type N-Channel MOSFET, 45 A, 75 V Enhancement, 3-Pin TO-252 IRFR2607ZTRPBF
- RS 제품 번호:
- 262-6768
- 제조사 부품 번호:
- IRFR2607ZTRPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩11,505.60
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩2,301.12 | ₩11,505.60 |
| 50 - 95 | ₩1,789.76 | ₩8,948.80 |
| 100 - 245 | ₩1,609.28 | ₩8,046.40 |
| 250 - 995 | ₩1,579.20 | ₩7,896.00 |
| 1000 + | ₩1,466.40 | ₩7,332.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 262-6768
- 제조사 부품 번호:
- IRFR2607ZTRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
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