제조사부품번호

Infineon HEXFET N-Channel MOSFET, 43 A, 200 V TO-263 IRFS38N20DTRLP

Name: Infineon HEXFET N-Channel MOSFET, 43 A, 200 V TO-263 IRFS38N20DTRLP
Brand: Infineon
SKU: 257-9427
Availability: InStock

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 reel of 800 units)*

₩2,518,400.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	릴당*
800 - 1600	₩3,148.00	₩2,518,880.00
2400 +	₩3,086.00	₩2,468,480.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

사양

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	43A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	54mΩ
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	60nC
	Maximum Power Dissipation Pd	320W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.5V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 43A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 54mΩ
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 60nC
	Maximum Power Dissipation Pd 320W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.5V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

The Infineon IRFS series is the 200V single n channel IR mosfet in a D2 Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered

관련된 링크들