제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 62 A, 200 V TO-263 IRFS4227TRLPBF

RS 제품 번호:: 257-9431
제조사 부품 번호:: IRFS4227TRLPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 62 A, 200 V TO-263 IRFS4227TRLPBF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩8,554.00

제한된 재고

796 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩4,277.00	₩8,554.00
10 - 48	₩3,835.20	₩7,670.40
50 - 98	₩3,760.00	₩7,520.00
100 - 248	₩3,308.80	₩6,617.60
250 +	₩3,233.60	₩6,467.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 257-9431
제조사 부품 번호:: IRFS4227TRLPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	62A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	26mΩ
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	330W
	Typical Gate Charge Qg @ Vgs	70nC
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 62A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Maximum Drain Source Resistance Rds 26mΩ
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 330W
	Typical Gate Charge Qg @ Vgs 70nC
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFS4227TRLPBF

The Infineon IRFS series is the 200V single n channel HEXFET power mosfet PDP Switch in a D2 Pak package.

Advanced process technology

Key parameters optimized for PDP sustain, energy recovery and pass switch applications

Low E pulse rating to reduce power

Dissipation in PDP sustain, energy recovery and pass switch applications

Low QG for fast response

High repetitive peak current capability for

Reliable operation

Short fall & rise times for fast switching

175°C operating junction temperature for improved ruggedness

Repetitive avalanche capability for robustness and reliability

Infineon HEXFET Type N-Channel MOSFET, 62 A, 200 V TO-263 IRFS4227TRLPBF

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