Infineon HEXFET N-Channel MOSFET, 159 A, 40 V Enhancement PQFN IRFH7440TRPBF
- RS 제품 번호:
- 257-9381
- 제조사 부품 번호:
- IRFH7440TRPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 4000 units)*
₩3,912,000.00
일시적 품절
- 2027년 1월 25일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 4000 + | ₩978.00 | ₩3,908,800.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-9381
- 제조사 부품 번호:
- IRFH7440TRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 159A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 6mm | |
| Height | 900μm | |
| Length | 5mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 159A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 6mm | ||
Height 900μm | ||
Length 5mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 40V Maximum Drain-Source Voltage, 159A Maximum Continuous Drain Current - IRFH7440TRPBF
This MOSFET is an enhancement-mode N-channel power transistor designed for high-current switching in surface-mounted applications. It operates across a broad temperature range and conforms to RoHS requirements, making it suitable for environments where compact, low-resistance switching is required without automotive certification constraints.
Features and Benefits:
• 2.4mΩ Rds(on) lowers conduction losses
• 104W Pd enables sustained power handling
• 159A continuous current supports heavy loads
• 92 nC gate charge balances drive speed and control
• 20V Vgs max provides gate overvoltage protection
• 104W Pd enables sustained power handling
• 159A continuous current supports heavy loads
• 92 nC gate charge balances drive speed and control
• 20V Vgs max provides gate overvoltage protection
Applications
• Suitable for high-current DC power stages
• Ideal for switch-mode power supplies
• Used with Compact thermal management systems
• Can be used for motor-drive inverter legs
• Used for synchronous rectification in converters
• Ideal for switch-mode power supplies
• Used with Compact thermal management systems
• Can be used for motor-drive inverter legs
• Used for synchronous rectification in converters
What mounting style does it require?
It is supplied in a PQFN package intended for surface-mount assembly.
What thermal range can it withstand during operation?
It is rated to function from -55°C up to 150°C.
How does its forward voltage affect efficiency?
Its forward voltage of 0.9V reduces voltage drop during conduction, affecting overall system losses.
Is it suitable for automotive-qualified designs?
It is not qualified to automotive standards and should not be selected where automotive certification is required.
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