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Infineon HEXFET N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF7862TRPBF

RS 제품 번호:: 257-9324
제조사 부품 번호:: IRF7862TRPBF
제조업체:: Infineon

Infineon HEXFET N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF7862TRPBF

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Subtotal (1 pack of 5 units)*

₩12,500.00

추가로 2026년 10월 26일 부터 2,975 개 단위 배송

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수량	한팩당	한팩당*
5 - 45	₩2,500.00	₩12,500.00
50 - 95	₩2,380.00	₩11,900.00
100 - 495	₩2,232.00	₩11,160.00
500 - 1995	₩2,076.00	₩10,380.00
2000 +	₩1,908.00	₩9,540.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 257-9324
제조사 부품 번호:: IRF7862TRPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	2.5W
	Typical Gate Charge Qg @ Vgs	30nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 2.5W
	Typical Gate Charge Qg @ Vgs 30nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF7862TRPBF

Infineon HEXFET Series MOSFET, 30V Maximum Drain-Source Voltage, 21A Maximum Continuous Drain Current - IRF7862TRPBF

This N-channel enhancement-mode MOSFET in an SO-8 package is a surface-mount power transistor designed for high-current switching in Compact assemblies. It operates across a wide ambient range and complies with RoHS, making it suitable for applications that require Compact, lead-free SMD power devices.

Features and Benefits:

• 4.5mΩ Rds(on) delivers low conduction losses under load
• 30V Vds enables mid-voltage power switching capability
• 21A continuous drain current supports high-current circuits
• 30nC typical gate charge allows moderate switching speed control
• 2.5W power dissipation manages thermal loading in tight spaces

Applications

• Suitable for DC power distribution modules
• Ideal for board-level motor driver stages
• Used with voltage regulators for load switching
• Can be used for battery protection circuits
• Suitable for power management in Compact converters

What gate voltage limits must be observed?

The device must not exceed ±20V between gate and source to prevent gate dielectric stress.

How does the package affect thermal handling?

The SO-8 surface-mount package limits heat-sinking, so board copper and thermal vias are recommended to assist in dissipating the 2.5W allowable power.

What environmental temperature range can it withstand?

It is rated to operate from -55°C up to 150°C, suitable for wide-temperature deployments.

Is this device suitable for automotive qualification?

It is not specified as meeting automotive standards and should not be assumed to be automotive-grade.