Infineon HEXFET Type N-Channel MOSFET, -9 A, 20 V, 8-Pin SO-8 IRF7324TRPBF
- RS 제품 번호:
- 257-9303
- 제조사 부품 번호:
- IRF7324TRPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩10,509.20
마지막 RS 재고
- 최종적인 3,355 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩2,101.84 | ₩10,509.20 |
| 50 - 95 | ₩1,996.56 | ₩9,982.80 |
| 100 - 495 | ₩1,880.00 | ₩9,400.00 |
| 500 - 1995 | ₩1,744.64 | ₩8,723.20 |
| 2000 + | ₩1,605.52 | ₩8,027.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-9303
- 제조사 부품 번호:
- IRF7324TRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | -9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id -9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Height 1.75mm | ||
Automotive Standard No | ||
The Infineon IRF series is the -20V dual p channel HEXFET power mosfet in a SO 8 package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Capable of being wave soldered
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET, -9 A, 20 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET, -12 A, -30 V SO-8 IRF9388TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8 IRF6644TRPBF
- Infineon HEXFET Type N-Channel MOSFET, -8 A, -30 V, 8-Pin SO-8 IRF7328TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8 IRF7862TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 14 A, 30 V, 8-Pin SO-8 IRF8714TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 10 A, 80 V, 8-Pin SO-8 IRF7854TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 10 A, 40 V, 8-Pin SO-8 IRF7470TRPBF
