Infineon HEXFET Type N-Channel MOSFET, 10 A, 40 V, 8-Pin SO-8 IRF7470TRPBF
- RS 제품 번호:
- 257-9312
- 제조사 부품 번호:
- IRF7470TRPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩10,321.20
마지막 RS 재고
- 최종적인 265 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩2,064.24 | ₩10,321.20 |
| 50 - 95 | ₩1,958.96 | ₩9,794.80 |
| 100 - 495 | ₩1,838.64 | ₩9,193.20 |
| 500 - 1995 | ₩1,710.80 | ₩8,554.00 |
| 2000 + | ₩1,575.44 | ₩7,877.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-9312
- 제조사 부품 번호:
- IRF7470TRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-40-520 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Distrelec Product Id 304-40-520 | ||
The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a SO 8 package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Capable of being wave soldered
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET, 10 A, 40 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET, -12 A, -30 V SO-8 IRF9388TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8 IRF6644TRPBF
- Infineon HEXFET Type N-Channel MOSFET, -8 A, -30 V, 8-Pin SO-8 IRF7328TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8 IRF7862TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 14 A, 30 V, 8-Pin SO-8 IRF8714TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 10 A, 80 V, 8-Pin SO-8 IRF7854TRPBF
- Infineon HEXFET Type N-Channel MOSFET, -9 A, 20 V, 8-Pin SO-8 IRF7324TRPBF
