Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V TO-252 IRFR3710ZTRPBF
- RS 제품 번호:
- 257-5855
- 제조사 부품 번호:
- IRFR3710ZTRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩14,382.00
재고있음
- 2,425 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩2,876.40 | ₩14,382.00 |
| 50 - 95 | ₩2,737.28 | ₩13,686.40 |
| 100 - 245 | ₩2,571.84 | ₩12,859.20 |
| 250 - 995 | ₩2,391.36 | ₩11,956.80 |
| 1000 + | ₩2,195.84 | ₩10,979.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-5855
- 제조사 부품 번호:
- IRFR3710ZTRPBF
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.39 mm | |
| Length | 6.73mm | |
| Height | 10.41mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-40-539 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Operating Temperature 175°C | ||
Width 2.39 mm | ||
Length 6.73mm | ||
Height 10.41mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Distrelec Product Id 304-40-539 | ||
The Infineon HEXFET power MOSFET is utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced process technology
Ultra low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
Multiple package options
Lead-free
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