Vishay SI3437DV Type P-Channel MOSFET, -1.4 A, -150 V, 6-Pin TSOP-6 SI3437DV-T1-GE3

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  • 2026년 12월 04일 부터 배송
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RS 제품 번호:
256-7350
제조사 부품 번호:
SI3437DV-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-1.4A

Maximum Drain Source Voltage Vds

-150V

Series

SI3437DV

Package Type

TSOP-6

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.79Ω

Maximum Power Dissipation Pd

3.2W

Typical Gate Charge Qg @ Vgs

8nC

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Height

1.1mm

Automotive Standard

No

Vishay SI3437DV Series MOSFET, 3.2W Maximum Power Dissipation, 150V Maximum Drain Source Voltage - SI3437DV-T1-GE3


This p-channel MOSFET is a surface-mount transistor designed for high-voltage switching and control in compact electronic assemblies. It operates across a broad thermal span, making it suitable for environments with large temperature swings, and is intended for circuit designs that require a controlled gate charge and moderate continuous current handling in a low-profile package.

Features and Benefits:


• 150V drain capability enables high-voltage switching applications
• 0.79Ω on-resistance reduces conduction losses during operation
• 1.4A continuous drain current supports modest load currents
• 8nC typical gate charge allows predictable switching behaviour
• 3.2W power dissipation handles moderate thermal loading
• RoHS compliance meets environmental material restrictions

Applications


• Suitable for high-voltage load switching in power supplies
• Ideal for battery protection and reverse-polarity circuits
• Used with compact converters requiring surface-mount components
• Can be used for signal-level switching in industrial controls
• Appropriate for consumer electronics with thermal variation demands

What mounting considerations are there for compact boards?


It is supplied in a TSOP-6 surface-mount package, so pad layout should follow TSOP-6 footprint recommendations and allow adequate copper for heat spreading.

How does gate drive affect switching performance?


Gate drive magnitude and slew rate will influence switching losses because the device exhibits an 8nC typical gate charge

driver selection should match desired rise/fall times.

What thermal range can it tolerate during operation?


The device is specified to function from -55°C up to +150°C, which accommodates applications with substantial ambient and junction temperature variation.

Are there limitations for automotive integration?


The part is not designated to automotive standards, so it should not be chosen where certified automotive-grade components are required.

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