Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP
- RS 제품 번호:
- 180-7281
- 제조사 부품 번호:
- SI3421DV-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩783,960.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩261.32 | ₩786,216.00 |
| 6000 - 9000 | ₩257.56 | ₩770,424.00 |
| 12000 + | ₩251.92 | ₩755,196.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-7281
- 제조사 부품 번호:
- SI3421DV-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 19.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.7W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Width | 2.98 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 19.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.7W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Width 2.98 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 19.2mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 8A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Adaptor switch
• DC/DC converter
• For mobile computing/consumer
• Load switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
관련된 링크들
- Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 8 A, 12 V Enhancement, 6-Pin TSOP
- Vishay TrenchFET Type P-Channel MOSFET, 5.4 A, 80 V Enhancement, 6-Pin TSOP
- Vishay TrenchFET Type P-Channel MOSFET, 8 A, 12 V Enhancement, 6-Pin TSOP SI3477DV-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 5.4 A, 80 V Enhancement, 6-Pin TSOP Si3129DV-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 8 A, 20 V Enhancement, 6-Pin TSOP
- Vishay TrenchFET Type P-Channel MOSFET, 8 A, 20 V Enhancement, 6-Pin TSOP SI3493DDV-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 2.3 A, 30 V Enhancement, 6-Pin TSOP