Vishay SI1427EDH Type P-Channel MOSFET, -2 A, -20 V, 6-Pin SC-70 SI1427EDH-T1-GE3

RS 제품 번호:: 256-7341
제조사 부품 번호:: SI1427EDH-T1-GE3
제조업체:: Vishay

Vishay SI1427EDH Type P-Channel MOSFET, -2 A, -20 V, 6-Pin SC-70 SI1427EDH-T1-GE3

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Subtotal (1 pack of 25 units)*

₩12,626.25

추가로 2026년 6월 22일 부터 2,825 개 단위 배송

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수량	한팩당	한팩당*
25 - 25	₩505.05	₩12,616.50
50 - 75	₩479.70	₩11,992.50
100 - 225	₩452.40	₩11,290.50
250 - 975	₩419.25	₩10,471.50
1000 +	₩386.10	₩9,633.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 256-7341
제조사 부품 번호:: SI1427EDH-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-2A
	Maximum Drain Source Voltage Vds	-20V
	Series	SI1427EDH
	Package Type	SC-70
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.165Ω
	Maximum Gate Source Voltage Vgs	8V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	7.6nC
	Maximum Power Dissipation Pd	2.8W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	1.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -2A
	Maximum Drain Source Voltage Vds -20V
	Series SI1427EDH
	Package Type SC-70
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.165Ω
	Maximum Gate Source Voltage Vgs 8V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 7.6nC
	Maximum Power Dissipation Pd 2.8W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 1.1mm
	Automotive Standard No

Datasheet - SI1427EDH-T1-GE3

Vishay SI1427EDH Series MOSFET, -20V Maximum Drain Source Voltage, -2A Maximum Continuous Drain Current - SI1427EDH-T1-GE3

This p‑channel MOSFET is a Compact surface‑mount transistor intended for switching and analogue applications in electronic systems. It operates as a P‑channel device with a maximum drain‑source voltage of -20 V, suitable for low‑voltage designs that require controlled current flow and gate‑driven switching performance. The device is aimed at professional applications in automation and electrical systems where board space and thermal endurance are important.

Features and Benefits:

• Low Rds(on) 0.165 Ω for reduced conduction losses • Maximum continuous drain current -2 A supports moderate load currents • Maximum power dissipation 2.8W enables sustained operation under load • Typical gate charge 7.6 nC allows efficient gate‑drive switching • Maximum operating temperature +150 °C for high‑temperature environments • RoHS approved for compliance with hazardous‑substances limits

Applications

• Suitable for high‑temperature power‑management circuitry • Ideal for low‑voltage load switching in automation equipment • Used for polarity protection in battery‑powered systems • Can be used for gate‑driven analogue switching in control modules • Suitable for Compact surface‑mount designs requiring P‑channel devices

What mounting method does it use for PCB assembly?

It is supplied in an SC‑70 package intended for surface mounting, optimised for automated pick‑and‑place assembly processes.

What gate voltage range is permissible for reliable operation?

The device accepts a maximum gate‑source voltage of 8 V

gate drive should remain within this limit to avoid damage.

How does it perform under low forward‑bias conditions?

The specified forward voltage is -1.2 V, indicating the drop expected during conduction in forward‑biased conditions.

What are the environmental temperature limits for storage and use?

The device is specified to operate down to -55 °C and up to +150 °C, covering a wide operational temperature span.