onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263
- RS 제품 번호:
- 254-7660
- 제조사 부품 번호:
- NTBG022N120M3S
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 800 units)*
₩15,109,184.00
일시적 품절
- 2026년 5월 25일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 800 - 800 | ₩18,886.48 | ₩15,109,484.80 |
| 1600 - 1600 | ₩18,508.60 | ₩14,807,180.80 |
| 2400 + | ₩18,138.24 | ₩14,511,043.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 254-7660
- 제조사 부품 번호:
- NTBG022N120M3S
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 117W | |
| Typical Gate Charge Qg @ Vgs | 148nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 117W | ||
Typical Gate Charge Qg @ Vgs 148nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
The ON Semiconductor NTB series of planar sic mosfets is optimized for fast switching applications with a planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
100% avalanche tested
Improved power density
Gate drive voltage 15V to 18V
관련된 링크들
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG022N120M3S
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG025N065SC1
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG060N065SC1
- onsemi NTB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET & Diode, 19.5 A, 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin TO-263 NTBG080N120SC1