ROHM RH6P040BH N-Channel MOSFET, 40 A, 100 V Enhancement HSMT-8 RH6P040BHTB1
- RS 제품 번호:
- 252-3154
- 제조사 부품 번호:
- RH6P040BHTB1
- 제조업체:
- ROHM
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- RS 제품 번호:
- 252-3154
- 제조사 부품 번호:
- RH6P040BHTB1
- 제조업체:
- ROHM
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Series | RH6P040BH | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 40 A | |
| Maximum Drain Source Voltage (Vds) | 100 V | |
| Channel Mode | Enhancement | |
| Package Type | HSMT-8 | |
| Automotive Standard | AEC-Q101 | |
| Forward Voltage (Vf) | 1.2 V | |
| Maximum Drain Source Resistance (Rds) | 2.7 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 104 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface Mount | |
| Standards/Approvals | RoHS, Pb Free | |
| Typical Gate Charge (Qg) @ Vgs | 16.7 nC | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Series RH6P040BH | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 40 A | ||
Maximum Drain Source Voltage (Vds) 100 V | ||
Channel Mode Enhancement | ||
Package Type HSMT-8 | ||
Automotive Standard AEC-Q101 | ||
Forward Voltage (Vf) 1.2 V | ||
Maximum Drain Source Resistance (Rds) 2.7 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 104 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface Mount | ||
Standards/Approvals RoHS, Pb Free | ||
Typical Gate Charge (Qg) @ Vgs 16.7 nC | ||
The Rohms offers a RH series of a power mosfet with low on resistance and suitable for switching. It is halogen free with 100% Rg and UIS tested with the input volage of 100 V.
Operating junction and storage temperature range is -55℃ to +150℃
Mounted on a cu board
Drain current is 40 A
Power dissipation is 59 W
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