Vishay Type P-Channel MOSFET, 65.7 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR1309DP-T1-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩12,032.00

Add to Basket
수량 선택 또는 입력
마지막 RS 재고
  • 최종적인 5,710 개 unit(s)이 배송 준비 됨
수량
한팩당
한팩당*
10 - 40₩1,203.20₩12,032.00
50 - 90₩1,143.04₩11,430.40
100 - 240₩1,075.36₩10,753.60
250 - 990₩1,000.16₩10,001.60
1000 +₩919.32₩9,193.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
252-0271
제조사 부품 번호:
SIR1309DP-T1-GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

65.7A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

54nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Width

5.15 mm

Standards/Approvals

No

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.

TrenchFET Gen IV p-channel power MOSFET

100% Rg tested

관련된 링크들