Vishay Type P-Channel MOSFET, 65.7 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR1309DP-T1-GE3

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Subtotal (1 pack of 10 units)*

₩12,850.50

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한팩당*
10 - 40₩1,285.05₩12,850.50
50 - 90₩1,220.70₩12,207.00
100 - 240₩1,148.55₩11,485.50
250 - 990₩1,068.60₩10,686.00
1000 +₩982.80₩9,828.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
252-0271
제조사 부품 번호:
SIR1309DP-T1-GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

65.7A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

54nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.

TrenchFET Gen IV p-channel power MOSFET

100% Rg tested

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