ROHM RW4E065GN Type N-Channel MOSFET, 10.7 A, 30 V Enhancement, 7-Pin HEML1616L7 RW4E065GNTCL1
- RS 제품 번호:
- 249-1136
- 제조사 부품 번호:
- RW4E065GNTCL1
- 제조업체:
- ROHM
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- RS 제품 번호:
- 249-1136
- 제조사 부품 번호:
- RW4E065GNTCL1
- 제조업체:
- ROHM
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | RW4E065GN | |
| Package Type | HEML1616L7 | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series RW4E065GN | ||
Package Type HEML1616L7 | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 30 V drain-source voltage and 6.5 A drain current, taping packing type.
Low on-resistance
Pb-free plating
RoHS compliant
Halogen free
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