STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220

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Subtotal 10 units (supplied in a tube)*

₩168,000.00

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한팩당
10 - 19₩16,800.00
20 - 29₩16,420.00
30 - 39₩16,020.00
40 +₩15,640.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
248-9687P
제조사 부품 번호:
STP60N043DM9
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Series

STP

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

245W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Height

4.6mm

Length

28.9mm

Standards/Approvals

UL

Automotive Standard

AEC-Q101

The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The fast recovery diode featuring very low recovery charge, time and RDS on makes this fast switching super junction power MOSFET tailored for the most demanding high efficiency bridge topologies and ZVS phase shift converters.

Fast recovery body diode

Worldwide best RDS on per area among silicon based fast recovery devices

Low gate charge, input capacitance and resistance

100 percent avalanche tested

Extremely dv/dt ruggedness

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