Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement
- RS 제품 번호:
- 248-8949P
- 제조사 부품 번호:
- CCB021M12FM3
- 제조업체:
- Wolfspeed
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal 2 units (supplied in a tube)*
₩807,280.00
일시적 품절
- 2027년 1월 25일 부터 배송
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수량 | 한팩당 |
|---|---|
| 2 - 4 | ₩403,640.00 |
| 5 - 9 | ₩395,560.00 |
| 10 + | ₩387,640.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 248-8949P
- 제조사 부품 번호:
- CCB021M12FM3
- 제조업체:
- Wolfspeed
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Mount Type | Chassis | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 469W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Mount Type Chassis | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 469W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Wolfspeed 1200 V, 11 mΩ All-Silicon Carbide Half-Bridge Module. The Wolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than achievable with either multiple discrete devices or with larger, high-ampacity modules.
Ultra-Low Loss
High Frequency Operation
Zero Turn-Off Tail Current from MOSFET
Normally-Off, Fail-Safe Device Operation
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