제조사부품번호

Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247 C3M0040120K

RS 제품 번호:: 248-8931
제조사 부품 번호:: C3M0040120K
제조업체:: Wolfspeed

Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247 C3M0040120K

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대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩26,583.20

재고있음

53 개 단위 배송 준비 완료
추가로 2026년 4월 02일 부터 30 개 단위 배송

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수량	한팩당
1 - 1	₩26,583.20
2 - 4	₩25,793.60
5 - 9	₩25,022.80
10 - 14	₩24,270.80
15 +	₩23,537.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 248-8931
제조사 부품 번호:: C3M0040120K
제조업체:: Wolfspeed

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모두 선택	제품 정보	값
	브랜드	Wolfspeed
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10.7A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	21mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	15 V
	Maximum Power Dissipation Pd	469W
	Typical Gate Charge Qg @ Vgs	94nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	23.63mm
	Width	16.13 mm
	Height	5.21mm
	Automotive Standard	No

	모두 선택
	브랜드 Wolfspeed
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 10.7A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 21mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 15 V
	Maximum Power Dissipation Pd 469W
	Typical Gate Charge Qg @ Vgs 94nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 23.63mm
	Width 16.13 mm
	Height 5.21mm
	Automotive Standard No

Datasheet - C3M0040120K

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency

3rd generation SiC MOSFET technology

Low impedance package with driver source pin

8mm of creepage distance between drain and source

High blocking voltage with low on-resistance

High-speed switching with low capacitances

Fast intrinsic diode with low reverse recovery (Qrr)

Halogen free, RoHS compliant

Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247 C3M0040120K

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