DiodesZetex Quad 4 Type P, Type N-Channel MOSFET, 100 V Enhancement, 8-Pin SOT-223 ZXMHC10A07T8TA
- RS 제품 번호:
- 246-7626
- 제조사 부품 번호:
- ZXMHC10A07T8TA
- 제조업체:
- DiodesZetex
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩19,851.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩3,970.20 | ₩19,851.00 |
| 50 - 95 | ₩3,872.70 | ₩19,363.50 |
| 100 - 245 | ₩3,783.00 | ₩18,915.00 |
| 250 - 495 | ₩3,689.40 | ₩18,447.00 |
| 500 + | ₩3,599.70 | ₩17,998.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 246-7626
- 제조사 부품 번호:
- ZXMHC10A07T8TA
- 제조업체:
- DiodesZetex
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.95V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 10.4W | |
| Transistor Configuration | Quad | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.95V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 10.4W | ||
Transistor Configuration Quad | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
The DiodesZetex makes a new generation complementary MOSFET H-Bridge, that features low on-resistance achievable with low gate drive. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SM-8 packaging. It offers fast switching and low input capacitance. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 100 V and maximum gate to source voltage is ±20 V 2 N-channel and 2 P-channels in a SOIC package It offers low on-resistance
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