DiodesZetex Quad 4 Type P, Type N-Channel MOSFET, 100 V Enhancement, 8-Pin SOT-223
- RS 제품 번호:
- 246-7025
- 제조사 부품 번호:
- ZXMHC10A07T8TA
- 제조업체:
- DiodesZetex
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 1000 units)*
₩1,896,920.00
마지막 RS 재고
- 최종적인 1,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 - 1000 | ₩1,896.92 | ₩1,897,296.00 |
| 2000 - 4000 | ₩1,859.32 | ₩1,859,320.00 |
| 5000 + | ₩1,802.92 | ₩1,803,672.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 246-7025
- 제조사 부품 번호:
- ZXMHC10A07T8TA
- 제조업체:
- DiodesZetex
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 10.4W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.95V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Quad | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 10.4W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.95V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Quad | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
The DiodesZetex makes a new generation complementary MOSFET H-Bridge, that features low on-resistance achievable with low gate drive. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SM-8 packaging. It offers fast switching and low input capacitance. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 100 V and maximum gate to source voltage is ±20 V 2 N-channel and 2 P-channels in a SOIC package It offers low on-resistance
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