DiodesZetex Dual 2 Type P-Channel MOSFET, 30 V Enhancement, 6-Pin SOT-363 DMP31D7LDWQ-7
- RS 제품 번호:
- 246-7532
- 제조사 부품 번호:
- DMP31D7LDWQ-7
- 제조업체:
- DiodesZetex
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대량 구매 할인 기용 가능
Subtotal (1 pack of 25 units)*
₩7,614.00
재고있음
- 2,975 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 25 | ₩304.56 | ₩7,632.80 |
| 50 - 75 | ₩297.04 | ₩7,444.80 |
| 100 - 225 | ₩289.52 | ₩7,256.80 |
| 250 - 975 | ₩283.88 | ₩7,087.60 |
| 1000 + | ₩278.24 | ₩6,937.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 246-7532
- 제조사 부품 번호:
- DMP31D7LDWQ-7
- 제조업체:
- DiodesZetex
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.7Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.29W | |
| Forward Voltage Vf | -0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.7Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.29W | ||
Forward Voltage Vf -0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes a dual P-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT363 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 30 V Maximum gate to source voltage is ±20 V It offers a low gate threshold voltage It provides a low input capacitance
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