DiodesZetex Dual DMN Type N-Channel MOSFET, 217 mA, 60 V Enhancement, 6-Pin SOT-363 DMN66D0LDWQ-7
- RS 제품 번호:
- 222-2848
- 제조사 부품 번호:
- DMN66D0LDWQ-7
- 제조업체:
- DiodesZetex
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 50 units)*
₩19,646.00
마지막 RS 재고
- 최종적인 2,350 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 50 - 50 | ₩392.92 | ₩19,646.00 |
| 100 - 200 | ₩385.40 | ₩19,288.80 |
| 250 - 450 | ₩379.76 | ₩18,950.40 |
| 500 - 950 | ₩372.24 | ₩18,612.00 |
| 1000 + | ₩364.72 | ₩18,273.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-2848
- 제조사 부품 번호:
- DMN66D0LDWQ-7
- 제조업체:
- DiodesZetex
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 217mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 250mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0 | |
| Height | 0.95mm | |
| Width | 1.3 mm | |
| Length | 2.15mm | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 217mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 250mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0 | ||
Height 0.95mm | ||
Width 1.3 mm | ||
Length 2.15mm | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
The DiodesZetex Dual N-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
관련된 링크들
- DiodesZetex Dual DMN Type N-Channel MOSFET, 217 mA, 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN3190LDWQ 1 Type N-Channel MOSFET, 1 A, 30 V Enhancement, 6-Pin SOT-363 DMN3190LDWQ-7
- DiodesZetex Dual DMN3190LDWQ 1 Type N-Channel MOSFET, 1 A, 30 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET, 800 mA, 30 V Enhancement, 6-Pin SOT-363 DMN3401LDWQ-7
- DiodesZetex Dual DMN53D0LDWQ 1 Type N-Channel MOSFET, 460 mA, 50 V Enhancement, 3-Pin SOT-363 DMN53D0LDWQ-7
- DiodesZetex Dual DMN53D0LDWQ 1 Type N-Channel MOSFET, 460 mA, 50 V Enhancement, 3-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET, 250 mA, 30 V Enhancement, 6-Pin SOT-363 DMN33D8LDWQ-7
- DiodesZetex Dual DMN Type N-Channel MOSFET, 800 mA, 30 V Enhancement, 6-Pin SOT-363