DiodesZetex DMP65H Type P-Channel MOSFET, 10.7 A, 12 V Enhancement, 8-Pin SOIC
- RS 제품 번호:
- 246-6842
- 제조사 부품 번호:
- DMP65H13D0HSS-13
- 제조업체:
- DiodesZetex
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대량 구매 할인 기용 가능
Subtotal (1 reel of 4000 units)*
₩4,406,720.00
일시적 품절
- 2026년 12월 28일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 4000 - 16000 | ₩1,101.68 | ₩4,410,480.00 |
| 20000 + | ₩1,081.00 | ₩4,322,496.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 246-6842
- 제조사 부품 번호:
- DMP65H13D0HSS-13
- 제조업체:
- DiodesZetex
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMP65H | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 13.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.45 mm | |
| Height | 6mm | |
| Length | 4.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMP65H | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 13.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Width 1.45 mm | ||
Height 6mm | ||
Length 4.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes MOSFET which are designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and high efficiency.
Maximum drain to source voltage is 600 V and maximum gate to source voltage is ±30 V It offers low on-resistance It has high BVDSS rating for power application It offers low input capacitance
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