DiodesZetex Isolated 2 Type P-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 122-3314
- Mfr. Part No.:
- DMP3085LSD-13
- Brand:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
₩437,100.00
현재 액세스할 수 없는 재고 정보
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | ₩174.84 | ₩438,510.00 |
| 5000 - 7500 | ₩172.96 | ₩430,050.00 |
| 10000 + | ₩169.20 | ₩421,120.00 |
*price indicative
- RS Stock No.:
- 122-3314
- Mfr. Part No.:
- DMP3085LSD-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.7W | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | -0.7V | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 4.95mm | |
| Height | 1.5mm | |
| Width | 3.95 mm | |
| Standards/Approvals | MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, J-STD-020 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
브랜드 DiodesZetex | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.7W | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf -0.7V | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 4.95mm | ||
Height 1.5mm | ||
Width 3.95 mm | ||
Standards/Approvals MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, J-STD-020 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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