Littelfuse Type N-Channel SiC Power Module, 36 A, 200 V Enhancement, 3-Pin TO-247
- RS 제품 번호:
- 245-6997
- 제조사 부품 번호:
- IXFH36N60X3
- 제조업체:
- Littelfuse
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대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩502,693.20
재고있음
- 추가로 2025년 12월 29일 부터 270 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 90 | ₩16,756.44 | ₩502,704.48 |
| 120 - 480 | ₩16,354.12 | ₩490,640.52 |
| 510 - 990 | ₩15,961.20 | ₩478,864.20 |
| 1020 - 2490 | ₩15,579.56 | ₩467,375.52 |
| 2520 + | ₩15,205.44 | ₩456,151.92 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 245-6997
- 제조사 부품 번호:
- IXFH36N60X3
- 제조업체:
- Littelfuse
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Littelfuse | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Littelfuse | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Littelfuse product is a 600V X3 Class Ultra Junction MOSFET available in 36A nominal current rating and TO 247 package. These Power MOSFETs feature significantly reduced channel resistance RDS on and gate charge Qg. They feature the lowest figures of merit RDS on and RDS on. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET series of power MOSFETs feature body diodes which offer low reverse recovery charge and short reverse recovery time.
Low static losses
Well-suited for high frequency applications
Simplified thermal design
High ruggedness against overvoltage
Low gate drive power demand
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