Littelfuse Type N-Channel SiC Power Module, 36 A, 12 V Enhancement, 3-Pin TO-268 IXFT60N60X3HV
- RS 제품 번호:
- 245-7012
- 제조사 부품 번호:
- IXFT60N60X3HV
- 제조업체:
- Littelfuse
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Subtotal (1 unit)*
₩16,318.40
재고있음
- 269 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 4 | ₩16,318.40 |
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| 120 + | ₩14,814.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 245-7012
- 제조사 부품 번호:
- IXFT60N60X3HV
- 제조업체:
- Littelfuse
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Littelfuse | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-268 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 446W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Littelfuse | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-268 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 446W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Littelfuse product is a 600V X3 Class Ultra Junction MOSFET available in 60A nominal current rating and TO 247 package. These Power MOSFETs feature significantly reduced channel resistance RDS on and gate charge Qg. They feature the lowest figures of merit RDS on Qg and RDS on . These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET series of power MOSFETs feature body diodes which offer low reverse recovery charge and short reverse recovery time.
Low static losses
Well-suited for high frequency applications
Simplified thermal design
High ruggedness against overvoltage
Low gate drive power demand
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