Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1

RS 제품 번호:: 244-1568
제조사 부품 번호:: BSZ065N06LS5ATMA1
제조업체:: Infineon

Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1

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Subtotal (5 units, in packs of 5)*

₩14,520.00

970 개 단위 배송 준비 완료
추가로 2027년 6월 17일 부터 5,000 개 단위 배송

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수량	한팩당	한팩당*
5 - 5	₩2,904.00	₩14,520.00
10 - 95	₩2,840.00	₩14,200.00
100 - 245	₩2,764.00	₩13,820.00
250 - 495	₩2,700.00	₩13,500.00
500 +	₩2,636.00	₩13,180.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-1568
제조사 부품 번호:: BSZ065N06LS5ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	212A
	Maximum Drain Source Voltage Vds	40V
	Series	BSZ
	Package Type	SuperSO8 5 x 6
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 212A
	Maximum Drain Source Voltage Vds 40V
	Series BSZ
	Package Type SuperSO8 5 x 6
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSZ065N06LS5ATMA1

Infineon BSZ Series MOSFET, 40V Maximum Drain Source Voltage, 212A Maximum Continuous Drain Current - BSZ065N06LS5ATMA1

This MOSFET is a high-current N-channel switching device designed for surface-mount power management in demanding electronic systems. It operates across a wide temperature range and is intended for applications requiring substantial continuous drain current and efficient conduction with low forward voltage.

Features and Benefits:

• 212A continuous drain current delivers sustained high-current capability
• 0.7mΩ Rds(on) minimises conduction losses for improved efficiency
• 81W maximum power dissipation supports elevated thermal loads
• 1.2V forward voltage reduces voltage drop under load
• 80nC typical gate charge enables fast switching performance
• 20V maximum gate-source rating protects gate from overvoltage

Applications

• Suitable for high-current DC-DC converters in power stages
• Ideal for motor drive half-bridge and H-bridge designs
• Used for battery protection and power distribution modules
• Can be used for synchronous rectification in power supplies
• Applicable to high-power switching in industrial control units

What thermal range can this device tolerate in operation?

It functions from −55°C up to +150°C enabling use in harsh temperature environments.

How is the component packaged for PCB assembly?

It comes in an 8-pin SuperSO8 5x6 surface-mount package for Compact board mounting.

What gate-drive considerations are needed for switching?

Drive circuitry must provide adequate charge for the typical 80nC gate charge to achieve the intended switching speed and respect the 20V maximum Vgs limit.

What type of channel conduction does it provide?

It is an N-channel device designed for enhanced current flow in low-side or high-side switching topologies.