제조사부품번호

Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ040N06LS5ATMA1

RS 제품 번호:: 241-9681
제조사 부품 번호:: BSZ040N06LS5ATMA1
제조업체:: Infineon

Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ040N06LS5ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩5,301.60

재고있음

6,910 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 5	₩1,060.32	₩5,301.60
10 - 95	₩1,045.28	₩5,226.40
100 - 245	₩1,018.96	₩5,094.80
250 - 495	₩1,003.92	₩5,019.60
500 +	₩981.36	₩4,906.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 241-9681
제조사 부품 번호:: BSZ040N06LS5ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	212A
	Maximum Drain Source Voltage Vds	40V
	Series	BSZ
	Package Type	SuperSO8 5 x 6
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 212A
	Maximum Drain Source Voltage Vds 40V
	Series BSZ
	Package Type SuperSO8 5 x 6
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSZ040N06LS5ATMA1

The Infineon OptiMOS™ 5 N-channel power MOSFET has 60 V drain source voltage (VDS) & 101 A drain current (ID). It's logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Optimized for high performance SMPS ,e.g. sync. rec.

100% avalanche tested

Superior thermal resistance

N-channel

Qualified according to JEDEC1) for target applications

Pb-free lead plating

RoHScompliant

Halogen-free according to IEC61249-2-21

Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ040N06LS5ATMA1

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