Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC0901NSATMA1

RS 제품 번호:: 244-1555
제조사 부품 번호:: BSC0901NSATMA1
제조업체:: Infineon

Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC0901NSATMA1

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Subtotal (1 pack of 5 units)*

₩10,780.00

5,000 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 5	₩2,156.00	₩10,780.00
10 - 95	₩2,092.00	₩10,460.00
100 - 245	₩2,056.00	₩10,280.00
250 - 495	₩1,992.00	₩9,960.00
500 +	₩1,960.00	₩9,800.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-1555
제조사 부품 번호:: BSC0901NSATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	381A
	Maximum Drain Source Voltage Vds	40V
	Series	BSC
	Package Type	SuperSO8 5 x 6
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 381A
	Maximum Drain Source Voltage Vds 40V
	Series BSC
	Package Type SuperSO8 5 x 6
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSC0901NSATMA1

Infineon BSC Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC0901NSATMA1

This MOSFET is an N-channel semiconductor switch designed for high-current power conversion and surface-mounted applications on Compact boards. It operates across a broad temperature span and is suitable where robust drain-to-source performance and controlled gate drive are required.

Features and Benefits:

• 40V maximum drain-to-source voltage enables mid-voltage power stages
• 381A continuous drain current supports high-current delivery
• 0.7mΩ low Rds(on) reduces conduction losses at heavy load
• 81W power dissipation permits substantial thermal handling
• 80nC typical gate charge allows predictable switching energy
• 20V gate-rating provides wide gate-drive margin for control

Applications

• Suitable for DC-DC converter primary switching stages
• Ideal for high-current power conversion modules
• Used with surface-mount assemblies requiring Compact MOSFETs
• Can be used for synchronous rectification in power supplies
• Suitable for high-current battery management circuits

What temperature range can it operate within?

It functions across −55°C to +150°C, accommodating extreme thermal environments.

What package is used for mounting on Compact PCBs?

It is supplied in a SuperSO8 5x6 mm surface-mount package for dense layouts.

How does the gate charge affect switching design?

The 80nC gate charge defines the drive energy and influences switching losses and driver sizing.

What is the forward voltage during conduction?

The forward voltage is specified at 1V, indicating its conduction drop under defined conditions.

Are there specific approvals or environmental standards noted?

It complies with RoHS requirements for restricted substances.