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Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC059N04LS6ATMA1

RS 제품 번호:: 243-9329
제조사 부품 번호:: BSC059N04LS6ATMA1
제조업체:: Infineon

Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC059N04LS6ATMA1

대량 구매 할인 기용 가능

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Subtotal (1 pack of 5 units)*

₩11,480.00

2,120 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 5	₩2,296.00	₩11,480.00
10 - 95	₩2,236.00	₩11,180.00
100 - 245	₩2,188.00	₩10,940.00
250 - 495	₩2,136.00	₩10,680.00
500 +	₩2,080.00	₩10,400.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 243-9329
제조사 부품 번호:: BSC059N04LS6ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	381A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SuperSO8 5 x 6
	Series	BSC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 381A
	Maximum Drain Source Voltage Vds 40V
	Package Type SuperSO8 5 x 6
	Series BSC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSC059N04LS6ATMA1

Infineon BSC Series MOSFET, 81W Maximum Power Dissipation, 40V Maximum Drain Source Voltage - BSC059N04LS6ATMA1

This MOSFET is a surface-mount N-channel transistor designed for high-current switching and power conversion in demanding thermal environments. It supports operation across a wide temperature range and is intended for use where low conduction losses and Rapid gate control are required.

Features and Benefits:

• 40 V drain capability enables medium-voltage switching applications
• 381 A continuous current supports heavy-current loads
• 0.7 mΩ RDS(on) reduces conduction losses at high currents
• 81 W power dissipation allows sustained thermal loading
• 80 nC typical gate charge enables responsive switching transitions
• 20 V gate rating permits substantial gate-drive amplitude

Applications

• Suitable for high-current DC-DC converters
• Ideal for synchronous rectification in power supplies
• Used with motor drivers requiring high continuous current
• Can be used for battery protection and power distribution
• Suitable for Compact surface-mount power modules

What package type is used for Compact PCB assembly?

It is supplied in a SuperSO8 5x6 mm package suitable for surface mounting.

What thermal range can it withstand during operation?

The device operates from −55 °C up to 175 °C for wide-temperature deployments.

What gate-drive considerations should be observed?

The maximum gate-to-source rating is 20 V and typical gate charge is 80 nC, so drive circuits must source sufficient charge for the desired switching speed.

How does it comply with environmental restrictions?

It meets RoHS requirements for restricted-substance compliance.