Infineon BSC0 N-Channel MOSFET, 381 A, 40 V, 8-Pin SuperSO8 5 x 6 BSC010N04LS6ATMA1

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₩9,240.00

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한팩당*
2 - 8₩4,620.00₩9,240.00
10 - 98₩4,510.00₩9,020.00
100 - 248₩4,410.00₩8,820.00
250 - 498₩4,290.00₩8,580.00
500 +₩4,190.00₩8,380.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
242-0290
제조사 부품 번호:
BSC010N04LS6ATMA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

381A

Maximum Drain Source Voltage Vds

40V

Series

BSC0

Package Type

SuperSO8 5 x 6

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon BSC0 Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC010N04LS6ATMA1


This MOSFET is a power-switching transistor designed for high-current, high-temperature operation in surface-mount assemblies. It provides N-channel switching capability for demanding power circuits and is intended for applications requiring substantial continuous drain current and elevated operating temperatures.

Features and Benefits:


• 381 A continuous drain current delivers sustained high-load performance
• 40 V drain-source rating enables medium-voltage power switching
• 0.7 mΩ Rds(on) minimises conduction losses under heavy current
• 81 W power dissipation supports elevated power throughput
• 80 nC typical gate charge reduces switching stress on drivers
• −55 °C to 175 °C rating permits operation across wide temperatures

Applications


• Suitable for high-current DC-DC converters in power systems
• Ideal for motor-drive stages requiring heavy current capacity
• Used with power-distribution modules in industrial equipment
• Can be used for synchronous rectification in supply designs
• Used for load-switching in harsh-temperature environments

What package and mounting style does this device use?


It is supplied in a SuperSO8 5x6 package configured for surface mount.

What is the maximum voltage that can be applied between drain and source?


The device tolerates up to 40 V between drain and source under specified conditions.

What gate voltage limits must be observed when driving this device?


Gate-to-source voltage must not exceed 20 V to avoid damaging the gate.

How does the thermal range affect deployment in extreme environments?


The device can operate from −55 °C up to 175 °C, enabling use in elevated-temperature applications where silicon junction limits are critical.

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