제조사부품번호

Infineon iPB Type P-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB110P06LMATMA1

RS 제품 번호:: 243-9268
제조사 부품 번호:: IPB110P06LMATMA1
제조업체:: Infineon

Infineon iPB Type P-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB110P06LMATMA1

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 unit)*

₩7,680.00

추가로 2026년 10월 05일 부터 336 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 9	₩7,680.00
10 - 99	₩7,520.00
100 - 249	₩7,320.00
250 - 499	₩7,160.00
500 +	₩6,980.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 243-9268
제조사 부품 번호:: IPB110P06LMATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	273A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 273A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPB110P06LMATMA1

Infineon iPB Series MOSFET, 100V Maximum Drain Source Voltage, 273A Maximum Continuous Drain Current - IPB110P06LMATMA1

This MOSFET is a P‑channel semiconductor switch designed for high-current and high-voltage applications, supplied in a surface-mount TO-263 package. It operates across a wide temperature span and is suitable for power conversion and switching tasks where thermal tolerance and Compact mounting are required.

Features and Benefits:

• Very low on-resistance enables reduced conduction losses
• High continuous drain current supports heavy load handling
• 100V drain-source rating allows higher-voltage deployment
• 81W power dissipation provides robust thermal capacity
• 80nC typical gate charge permits responsive switching
• RoHS conformity minimises hazardous substance content

Applications

• Suitable for synchronous rectification in power supplies
• Useful in motor-drive downstream stages requiring high current
• Can be used for high-voltage DC-DC converter switches
• Ideal for Compact surface-mount power modules
• Used for fast switching in transient load environments

What gate voltage limits must be observed during use?

Gate-source voltage must not exceed ±20V to avoid damaging the gate structure.

How does temperature range affect deployment options?

The device functions from -55°C to 175°C, allowing use in both cold-start and elevated-temperature conditions.

What mounting considerations apply for thermal performance?

Employ appropriate PCB thermal pads and heat-sinking with the TO-263 footprint to manage the 81W dissipation.

How does channel type influence circuit polarity?

As a P‑channel device, it requires appropriate polarity arrangements for high-side switching configurations.

What switching behaviour is indicated by its forward voltage?

A forward voltage of 1.1V reflects its conduction characteristic under specified drive and load conditions.