Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB110N20N3LFATMA1
- RS 제품 번호:
- 242-5823
- 제조사 부품 번호:
- IPB110N20N3LFATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩10,922.80
재고있음
- 1,990 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩10,922.80 |
| 10 - 99 | ₩10,659.60 |
| 100 - 249 | ₩10,396.40 |
| 250 - 499 | ₩10,152.00 |
| 500 + | ₩9,907.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 242-5823
- 제조사 부품 번호:
- IPB110N20N3LFATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon Linear FET MOSFET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Combination of low R DS(on) and wide safe operating area (SOA)
High max pulse current
High continuous pulse current
Maximum drain current is 88A
Operating Temperature range is from -55 °C to 150 °C
관련된 링크들
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB048N15N5LFATMA1
- Infineon iPB Type P-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB110P06LMATMA1
- Infineon iPB Type P-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET, 120 A, 100 V N, 3-Pin TO-263 IPB020N10N5LFATMA1
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V P, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1