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Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB60R070CFD7ATMA1

RS 제품 번호:: 242-5830
제조사 부품 번호:: IPB60R070CFD7ATMA1
제조업체:: Infineon

Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB60R070CFD7ATMA1

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Subtotal (1 unit)*

₩8,478.80

재고있음

970 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩8,478.80
10 - 99	₩8,272.00
100 - 249	₩8,084.00
250 - 499	₩7,877.20
500 +	₩7,689.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 242-5830
제조사 부품 번호:: IPB60R070CFD7ATMA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	273A
	Maximum Drain Source Voltage Vds	100V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 273A
	Maximum Drain Source Voltage Vds 100V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPB60R070CFD7ATMA1

COO (Country of Origin):: MY

The Infineon Super junction MOSFET in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and EOSS

Excellent hard commutation ruggedness

Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB60R070CFD7ATMA1

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