제조사부품번호

Infineon BSC0 Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC018NE2LSIATMA1

RS 제품 번호:: 241-9668
제조사 부품 번호:: BSC018NE2LSIATMA1
제조업체:: Infineon

Infineon BSC0 Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC018NE2LSIATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩9,099.20

마지막 RS 재고

최종적인 5,000 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
5 - 5	₩1,819.84	₩9,099.20
10 - 95	₩1,778.48	₩8,892.40
100 - 245	₩1,733.36	₩8,666.80
250 - 495	₩1,692.00	₩8,460.00
500 +	₩1,650.64	₩8,253.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 241-9668
제조사 부품 번호:: BSC018NE2LSIATMA1
제조업체:: Infineon

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	381A
	Maximum Drain Source Voltage Vds	40V
	Series	BSC0
	Package Type	SuperSO8 5 x 6
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.9mΩ
	Channel Mode	N
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 381A
	Maximum Drain Source Voltage Vds 40V
	Series BSC0
	Package Type SuperSO8 5 x 6
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.9mΩ
	Channel Mode N
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSC018NE2LSIATMA1

The Infineon OptiMOS™ 5 N-channel power MOSFET has 25 V drain source voltage (VDS) & 153 A drain current (ID). It's ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, makes it the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. It saves overall system costs by reducing the number of phases in multiphase converters and reduce power losses and increase efficiency for all load conditions.

Optimized for high performance buck converter

Monolithic integrated schottky like diode

Very low on-resistance RDS(on)@VGS = 4.5V

100% avalanche tested

N-channel

Qualified according to JEDEC1) for target applications

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

Infineon BSC0 Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC018NE2LSIATMA1

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