제조사부품번호

Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC0906NSATMA1

RS 제품 번호:: 243-9310
제조사 부품 번호:: BSC0906NSATMA1
제조업체:: Infineon

Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC0906NSATMA1

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대량 구매 할인 기용 가능

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Subtotal (1 pack of 10 units)*

₩12,600.00

일시적 품절

4,360 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 10	₩1,260.00	₩12,600.00
20 - 90	₩1,230.00	₩12,300.00
100 - 240	₩1,202.00	₩12,020.00
250 - 490	₩1,172.00	₩11,720.00
500 +	₩1,144.00	₩11,440.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 243-9310
제조사 부품 번호:: BSC0906NSATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	381A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SuperSO8 5 x 6
	Series	BSC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 381A
	Maximum Drain Source Voltage Vds 40V
	Package Type SuperSO8 5 x 6
	Series BSC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSC0906NSATMA1

Infineon BSC Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC0906NSATMA1

This MOSFET is a surface-mount N-channel transistor designed to switch and control high currents in power electronic circuits. It operates across a broad temperature range and is intended for applications requiring substantial continuous drain current and elevated power handling in a Compact package.

Features and Benefits:

• 381 A continuous drain current enabling high-current switching
• 81 W power dissipation for sustained thermal load handling
• 0.7 mΩ RDS(on) minimising conduction losses during operation
• 40 V drain-source rating supporting medium-voltage systems
• 80 nC gate charge facilitating predictable switching control

Applications

• Suitable for high-current DC-DC converter stages
• Used for synchronous rectification in power modules
• Ideal for motor drive output stages requiring large currents
• Can be used for server power distribution and VRM designs
• Useful in Compact surface-mount power assemblies

What gate voltage range can be applied safely?

Gate drive must not exceed 20 V between gate and source to avoid damaging the gate oxide.

What ambient temperature extremes can it tolerate in operation?

It is specified to operate from −55 °C up to +150 °C, allowing use in wide-temperature environments.

How does the package affect mounting and the thermal path?

The device is supplied in a SuperSO8 package sized 5 x 6 mm for surface mounting, offering a short conduction path to PCB thermal planes.

What is the forward voltage relevant to conduction scenarios?

The forward voltage is 1 V, relevant when assessing voltage drop in rectification or low-side conduction contexts.