Microchip MSC025SMA120B4 Type N-Channel MOSFET, 140 A, 12 V, 4-Pin TO-247
- RS 제품 번호:
- 241-9251P
- 제조사 부품 번호:
- MSC025SMA120B4
- 제조업체:
- Microchip
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal 5 units (supplied in a tube)*
₩325,700.00
재고있음
- 32 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 5 - 9 | ₩65,140.00 |
| 10 - 99 | ₩63,840.00 |
| 100 + | ₩62,560.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 241-9251P
- 제조사 부품 번호:
- MSC025SMA120B4
- 제조업체:
- Microchip
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-247 | |
| Series | MSC025SMA120B4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Forward Voltage Vf | 1.8V | |
| Typical Gate Charge Qg @ Vgs | 232nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-247 | ||
Series MSC025SMA120B4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Forward Voltage Vf 1.8V | ||
Typical Gate Charge Qg @ Vgs 232nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications. The MSC025SMA120B4 device is a 1200 V 25 mΩ Sic MOSFET in a TO 247 4 lead package with a source sense.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature T equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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