제조사부품번호

Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN2R0-55YLHX

RS 제품 번호:: 240-1975
제조사 부품 번호:: PSMN2R0-55YLHX
제조업체:: Nexperia

Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN2R0-55YLHX

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩7,933.60

재고있음

1,758 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 48	₩3,966.80	₩7,933.60
50 - 98	₩3,891.60	₩7,783.20
100 - 248	₩3,825.80	₩7,651.60
250 - 498	₩3,760.00	₩7,520.00
500 +	₩3,684.80	₩7,369.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 240-1975
제조사 부품 번호:: PSMN2R0-55YLHX
제조업체:: Nexperia

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10.3A
	Maximum Drain Source Voltage Vds	30V
	Package Type	LFPAK56E
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	13.6mΩ
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	12.5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10.3A
	Maximum Drain Source Voltage Vds 30V
	Package Type LFPAK56E
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 13.6mΩ
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 12.5W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - PSMN2R0-55YLHX

The Nexperia N-channel enhancement mode MOSFET is in LFPAK56E package. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe a

Qualified to 175 °C

Avalanche rated, 100% tested

Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage

Narrow VGS(th) rating for easy paralleling and improved current sharing

Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN2R0-55YLHX

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