Nexperia 2 Type N-Channel MOSFET, 42 A, 40 V, 8-Pin LFPAK56D BUK9V13-40HX
- RS 제품 번호:
- 240-1822
- 제조사 부품 번호:
- BUK9V13-40HX
- 제조업체:
- Nexperia
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩8,441.20
일시적 품절
- 2026년 7월 27일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩1,688.24 | ₩8,441.20 |
| 50 - 95 | ₩1,658.16 | ₩8,290.80 |
| 100 - 245 | ₩1,628.08 | ₩8,140.40 |
| 250 - 495 | ₩1,598.00 | ₩7,990.00 |
| 500 + | ₩1,571.68 | ₩7,858.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 240-1822
- 제조사 부품 번호:
- BUK9V13-40HX
- 제조업체:
- Nexperia
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK56D | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Typical Gate Charge Qg @ Vgs | 13.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20 V | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK56D | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Typical Gate Charge Qg @ Vgs 13.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20 V | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Nexperia dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 Trench MOS technology. This product has been designed and qualified to AEC-Q101.
LFPAK56D package with half-bridge configuration enables
Reduced PCB layout complexity
PCB shrinkage through reduced component footprint for 3-phase motor drive
Improved system level Rth(j-amb) due to optimized package design
Lower parasitic inductance to support higher efficiency
Footprint compatibility with LFPAK56D Dual package
Advanced AEC-Q101 grade Trench 9 silicon technology
Low power losses, high power density
Superior avalanche performance
Repetitive avalanche rated
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