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Microchip VP2206 Type P-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92

RS 제품 번호:: 239-5620
제조사 부품 번호:: VP2206N3-G
제조업체:: Microchip

Microchip VP2206 Type P-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92

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Subtotal (1 tray of 1000 units)*

₩2,833,160.00

일시적 품절

2026년 2월 25일 부터 배송

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수량	한팩당	Per Tray*
1000 - 4000	₩2,833.16	₩2,832,596.00
5000 +	₩2,549.28	₩2,549,280.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 239-5620
제조사 부품 번호:: VP2206N3-G
제조업체:: Microchip

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Microchip
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	10.3A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-92
	Series	VP2206
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.8V
	Maximum Power Dissipation Pd	140W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 10.3A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-92
	Series VP2206
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.8V
	Maximum Power Dissipation Pd 140W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - VP2206N3-G

The Microchip VP2206 series are enhancement-mode (normally-off) transistors which utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. These vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

It has a Free from secondary breakdown

It has a Low power drive requirement

It offers an ease of paralleling, low CISS and fast switching speeds

It has high input impedance and high gain with excellent thermal stability

It has an integral source-to-drain diode

Microchip VP2206 Type P-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92

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