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Microchip VP0106 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92 VP0106N3-G

RS 제품 번호:: 236-8962
제조사 부품 번호:: VP0106N3-G
제조업체:: Microchip

Microchip VP0106 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92 VP0106N3-G

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩15,566.40

재고있음

70 개 단위 배송 준비 완료
추가로 2026년 1월 05일 부터 680 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 40	₩1,556.64	₩15,566.40
50 - 90	₩1,530.32	₩15,303.20
100 - 240	₩1,500.24	₩15,002.40
250 - 490	₩1,473.92	₩14,739.20
500 +	₩1,447.60	₩14,476.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 236-8962
제조사 부품 번호:: VP0106N3-G
제조업체:: Microchip

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Microchip
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	140A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TO-92
	Series	VP0106
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.6W
	Forward Voltage Vf	1.8V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 140A
	Maximum Drain Source Voltage Vds 30V
	Package Type TO-92
	Series VP0106
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.6W
	Forward Voltage Vf 1.8V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - VP0106N3-G

The Microchip enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip VP0106 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92 VP0106N3-G

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