제조사부품번호

Microchip VP0104 Type P-Channel MOSFET, -500 mA, 40 V MOSFET, 3-Pin TO-92

RS 제품 번호:: 264-8948
제조사 부품 번호:: VP0104N3-G
제조업체:: Microchip

Microchip VP0104 Type P-Channel MOSFET, -500 mA, 40 V MOSFET, 3-Pin TO-92

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Subtotal (1 Bag of 1000 units)*

₩1,052,800.00

일시적 품절

2026년 2월 03일 부터 배송

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수량	한팩당	Per Bag*
1000 +	₩1,052.80	₩1,052,048.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 264-8948
제조사 부품 번호:: VP0104N3-G
제조업체:: Microchip

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Microchip
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-500mA
	Maximum Drain Source Voltage Vds	40V
	Series	VP0104
	Package Type	TO-92
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8Ω
	Channel Mode	MOSFET
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -500mA
	Maximum Drain Source Voltage Vds 40V
	Series VP0104
	Package Type TO-92
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8Ω
	Channel Mode MOSFET
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - VP0104N3-G

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip VP0104 Type P-Channel MOSFET, -500 mA, 40 V MOSFET, 3-Pin TO-92

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