Vishay SiR588DP Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3

RS 제품 번호:: 239-5394
제조사 부품 번호:: SiR588DP-T1-RE3
제조업체:: Vishay

Vishay SiR588DP Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3

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Subtotal (1 pack of 10 units)*

₩17,360.00

추가로 2026년 8월 24일 부터 2,850 개 단위 배송

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수량	한팩당	한팩당*
10 - 40	₩1,736.00	₩17,360.00
50 - 90	₩1,686.00	₩16,860.00
100 - 240	₩1,632.00	₩16,320.00
250 - 990	₩1,584.00	₩15,840.00
1000 +	₩1,536.00	₩15,360.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 239-5394
제조사 부품 번호:: SiR588DP-T1-RE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	59.5A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PowerPAK SO-8
	Series	SiR588DP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.008Ω
	Typical Gate Charge Qg @ Vgs	14.2nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	59.5W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Width	5.15mm
	Length	6.15mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 59.5A
	Maximum Drain Source Voltage Vds 80V
	Package Type PowerPAK SO-8
	Series SiR588DP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.008Ω
	Typical Gate Charge Qg @ Vgs 14.2nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 59.5W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Width 5.15mm
	Length 6.15mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiR588DP-T1-RE3

Vishay SiR588DP Series MOSFET, 80V Drain Source Voltage, 59.5A Continuous Drain Current - SiR588DP-T1-RE3

This n‑channel power MOSFET is designed for high-current switching in surface-mount power electronics. It operates across a wide temperature range and suits demanding thermal environments while providing low conduction losses and efficient gate control for fast-switching applications.

Features and Benefits:

• Very low on‑resistance reduces conduction losses and heat
• High continuous drain current supports heavy-load switching
• 80V drain-source rating enables medium-voltage designs
• Moderate gate charge allows efficient switching control
• Substantial power-dissipation capacity improves thermal margin

Applications

• Suitable for DC-DC converters in power management
• Ideal for motor-drive inverter stages
• Used with power supplies for server and telecom equipment
• Can be used for battery management and charging systems

What package type does it use and why does that matter?

It is supplied in a PowerPAK SO‑8 package which offers a compact surface-mount footprint and improved thermal contact for dissipating heat on densely populated boards.

How does the device behave across temperature extremes?

It is rated to operate from -55 °C up to 150 °C, allowing use in both cold-start conditions and high-temperature enclosures while maintaining specified electrical performance.

What gate-drive constraints should be observed?

The maximum gate-source voltage is 20V so gate-drive circuits must be limited to this value to prevent gate overstress.

What electrical characteristics affect switching efficiency?

Low drain-source resistance together with a typical gate charge of 14.2 nC determine conduction losses and switching energy, influencing overall system efficiency.