Vishay E Type N-Channel Power MOSFET, 29 A, 600 V, 8-Pin PowerPAK 10 x 12 SIHK075N60E-T1-GE3

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포장 옵션
RS 제품 번호:
239-5381
제조사 부품 번호:
SIHK075N60E-T1-GE3
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK 10 x 12

Series

E

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.08Ω

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

167W

Typical Gate Charge Qg @ Vgs

41nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 29A Continuous Drain Current - SIHK075N60E-T1-GE3


This power MOSFET is a high-voltage, N‑channel semiconductor device designed for switching and power conversion in demanding electronic systems. It is suited to surface-mount applications where compact packaging and robust thermal performance are required, and complies with RoHS environmental restrictions.

Features and Benefits:


• 600V rating enables high-voltage switching capability
• 29A continuous drain current supports substantial load currents
• 0.08Ω Rds(on) delivers low conduction losses
• 167W power dissipation allows effective thermal handling
• 41nC typical gate charge permits controlled switching dynamics
• 30V gate tolerance provides broad gate-drive margin

Applications


• Suitable for industrial motor-drive inverters
• Used with power supplies for server and telecoms equipment
• Ideal for DC-DC converters in renewable energy systems
• Can be used for high-voltage switch controllers in instrumentation
• Suitable for LED lighting drivers requiring high-voltage switches

What mounting method is required for reliable electrical connection?


It is supplied in a low-profile PowerPAK 10x12 package intended for surface mounting to a PCB using solder pads for mechanical and thermal contact.

How wide is the operating temperature range for harsh environments?


The device is rated to operate from -55°C up to 150°C, allowing use across extreme ambient and elevated junction conditions.

What gate-drive considerations should be observed?


The maximum gate-source voltage is 30V, so gate-drive circuits must limit Vgs within this boundary and provide sufficient drive to achieve the specified gate charge of around 41nC.

How does the package support thermal dissipation?


The PowerPAK 10x12 format offers a thermal path through the package to the PCB, aiding the device in managing up to 167W of dissipation under appropriate board thermal design.

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