Vishay E Type N-Channel Power MOSFET, 29 A, 600 V, 8-Pin PowerPAK 10 x 12 SIHK075N60E-T1-GE3
- RS 제품 번호:
- 239-5380
- 제조사 부품 번호:
- SIHK075N60E-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 2000 units)*
₩12,084,000.00
일시적 품절
- 2,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2000 - 8000 | ₩6,042.00 | ₩12,084,000.00 |
| 10000 + | ₩5,860.00 | ₩11,721,200.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 239-5380
- 제조사 부품 번호:
- SIHK075N60E-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.08Ω | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.08Ω | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Drain Source Voltage, 29A Continuous Drain Current - SIHK075N60E-T1-GE3
This power MOSFET is a high-voltage, N‑channel semiconductor device designed for switching and power conversion in demanding electronic systems. It is suited to surface-mount applications where compact packaging and robust thermal performance are required, and complies with RoHS environmental restrictions.
Features and Benefits:
• 600V rating enables high-voltage switching capability
• 29A continuous drain current supports substantial load currents
• 0.08Ω Rds(on) delivers low conduction losses
• 167W power dissipation allows effective thermal handling
• 41nC typical gate charge permits controlled switching dynamics
• 30V gate tolerance provides broad gate-drive margin
• 29A continuous drain current supports substantial load currents
• 0.08Ω Rds(on) delivers low conduction losses
• 167W power dissipation allows effective thermal handling
• 41nC typical gate charge permits controlled switching dynamics
• 30V gate tolerance provides broad gate-drive margin
Applications
• Suitable for industrial motor-drive inverters
• Used with power supplies for server and telecoms equipment
• Ideal for DC-DC converters in renewable energy systems
• Can be used for high-voltage switch controllers in instrumentation
• Suitable for LED lighting drivers requiring high-voltage switches
• Used with power supplies for server and telecoms equipment
• Ideal for DC-DC converters in renewable energy systems
• Can be used for high-voltage switch controllers in instrumentation
• Suitable for LED lighting drivers requiring high-voltage switches
What mounting method is required for reliable electrical connection?
It is supplied in a low-profile PowerPAK 10x12 package intended for surface mounting to a PCB using solder pads for mechanical and thermal contact.
How wide is the operating temperature range for harsh environments?
The device is rated to operate from -55°C up to 150°C, allowing use across extreme ambient and elevated junction conditions.
What gate-drive considerations should be observed?
The maximum gate-source voltage is 30V, so gate-drive circuits must limit Vgs within this boundary and provide sufficient drive to achieve the specified gate charge of around 41nC.
How does the package support thermal dissipation?
The PowerPAK 10x12 format offers a thermal path through the package to the PCB, aiding the device in managing up to 167W of dissipation under appropriate board thermal design.
관련된 링크들
- Vishay SIHK075N60E Type N-Channel MOSFET, 29 A, 600 V, 8-Pin PowerPAK 10 x 12 SIHK075N60E-T1-GE3
- Vishay E Series N channel-Channel MOSFET, 29 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK075N65E-T1-GE3
- Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3
- Vishay Type N-Channel MOSFET & Diode, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3
- Vishay E Type N-Channel MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3
- Vishay E Type N-Channel MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3
- Vishay E Type N-Channel MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3
