Infineon ISC N-Channel MOSFET, 75 A, 100 V, 8-Pin TDSON ISC080N10NM6ATMA1

RS 제품 번호:: 235-4871
제조사 부품 번호:: ISC080N10NM6ATMA1
제조업체:: Infineon

Infineon ISC N-Channel MOSFET, 75 A, 100 V, 8-Pin TDSON ISC080N10NM6ATMA1

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Subtotal (5 units, in packs of 5)*

₩20,780.00

일시적 품절

2027년 10월 04일 부터 배송

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수량	한팩당	한팩당*
5 - 5	₩4,156.00	₩20,780.00
10 - 95	₩4,076.00	₩20,380.00
100 - 245	₩3,992.00	₩19,960.00
250 - 495	₩3,904.00	₩19,520.00
500 +	₩3,832.00	₩19,160.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 235-4871
제조사 부품 번호:: ISC080N10NM6ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	75A
	Maximum Drain Source Voltage Vds	100V
	Series	ISC
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	8.05mΩ
	Maximum Power Dissipation Pd	100W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Height	5.35mm
	Length	6.1mm
	Standards/Approvals	No
	Width	1.2mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 75A
	Maximum Drain Source Voltage Vds 100V
	Series ISC
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 8.05mΩ
	Maximum Power Dissipation Pd 100W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Height 5.35mm
	Length 6.1mm
	Standards/Approvals No
	Width 1.2mm
	Automotive Standard No

Datasheet - ISC080N10NM6ATMA1

Infineon ISC Series MOSFET, 100V Maximum Drain Source Voltage, 75A Maximum Continuous Drain Current - ISC080N10NM6ATMA1

This MOSFET is a high-current N-channel transistor designed for power switching in Compact surface-mount assemblies. It operates across a wide temperature span and is intended for applications requiring substantial drain current capability and thermal tolerance in board-mounted power stages.

Features and Benefits:

• 100V drain rating enables robust voltage headroom for power stages
• 75A continuous drain current supports high-load switching demands
• 100W power dissipation allows sustained thermal handling under load
• 8.05mΩ Rds(on) minimises conduction losses for efficiency gains
• 24nC typical gate charge permits predictable switching performance
• 20V maximum gate-source voltage provides gate protection margin

Applications

• Suitable for DC-DC converter output stages
• Ideal for high-current synchronous rectification tasks
• Used with motor-drive half-bridges in Compact inverters
• Can be used for power distribution switches on boards
• Suitable for switch-mode power supply primary or secondary stages

What operating temperature range can it tolerate?

It is specified to function from -55°C up to 175°C, allowing use in thermally demanding environments.

What package and mounting style should I plan for?

It is supplied in a TDSON package and intended for surface-mount assembly on PCB lands.

What are the physical footprint constraints?

The package measures 6.1mm in length, 1.2mm in width and 5.35mm in height for layout planning.

How does gate drive requirement affect switching design?

The typical total gate charge of 24nC defines the charge delivery needed from the driver to achieve desired switching speeds.

What channel type and polarity does it employ?

It uses an N-channel configuration suitable for low-side or high-side arrangements where N-channel devices are required.