Infineon ISC N-Channel MOSFET, 192 A, 100 V, 8-Pin TDSON ISC027N10NM6ATMA1

RS 제품 번호:: 235-4864
제조사 부품 번호:: ISC027N10NM6ATMA1
제조업체:: Infineon

Infineon ISC N-Channel MOSFET, 192 A, 100 V, 8-Pin TDSON ISC027N10NM6ATMA1

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Subtotal (5000 units, on reels of 5000)*

₩16,640,000.00

일시적 품절

2027년 9월 30일 부터 5,000 개 단위 배송

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수량	한팩당	릴당*
5000 - 5000	₩3,328.00	₩16,637,000.00
10000 - 10000	₩3,260.00	₩16,305,000.00
15000 +	₩3,196.00	₩15,978,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 235-4864
제조사 부품 번호:: ISC027N10NM6ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	192A
	Maximum Drain Source Voltage Vds	100V
	Series	ISC
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.24mΩ
	Typical Gate Charge Qg @ Vgs	91nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	245W
	Maximum Operating Temperature	175°C
	Width	1.1mm
	Standards/Approvals	No
	Height	5.1mm
	Length	6.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 192A
	Maximum Drain Source Voltage Vds 100V
	Series ISC
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.24mΩ
	Typical Gate Charge Qg @ Vgs 91nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 245W
	Maximum Operating Temperature 175°C
	Width 1.1mm
	Standards/Approvals No
	Height 5.1mm
	Length 6.1mm
	Automotive Standard No

Datasheet - ISC027N10NM6ATMA1

Infineon ISC Series MOSFET, 100V Maximum Drain Source Voltage, 245W Maximum Power Dissipation - ISC027N10NM6ATMA1

This MOSFET is a high-current switching transistor designed for power conversion and motor-drive environments, offering robust operation across a wide temperature range and a surface-mount footprint suited to Compact assemblies. It provides low conduction loss and substantial current handling for demanding applications where voltage blocking and gate control are critical.

Features and Benefits:

• 100 V drain rating enables high-voltage switching capability
• 192 A continuous drain current supports heavy-load operation
• 2.24 mΩ Rds(on) minimises conduction losses for efficiency
• 245 W power dissipation allows sustained power handling
• 91 nC typical gate charge balances drive requirements and switching speed
• 20 V gate-source rating permits wide gate drive headroom

Applications

• Suitable as a 100 V, 192 A power MOSFET for motor-drive
• Ideal for high-current DC-DC converters in Compact systems
• Used with battery management and traction inverter stages
• Can be used for power stages requiring low Rds(on) MOSFETs with 245 W power dissipation
• Suitable for high-temperature MOSFET environments from −55 °C to 175 °C

What mounting style is used for this component?

It is supplied in an 8‑pin TDSON surface-mount package designed for board-level assembly.

What thermal extremes can this device tolerate during operation?

The operational range extends from −55 °C up to 175 °C, allowing use in elevated-temperature conditions.

What is the forward voltage characteristic during conduction?

The forward voltage Vf is specified at 1 V under conduction conditions.

How many pins does this package present for PCB layout considerations?

The device has an 8‑pin configuration for thermal and electrical termination.