Name: Infineon ISC Type N-Channel MOSFET, 230 A, 100 V, 8-Pin SuperSO8 5 x 6 ISC022N10NM6ATMA1
Brand: Infineon
SKU: 235-4862
Price: 3399.04 KRW
Availability: BackOrder

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	230A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SuperSO8 5 x 6
	Series	ISC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.24mΩ
	Maximum Power Dissipation Pd	245W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	91nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	6.1mm
	Width	1.1 mm
	Height	5.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 230A
	Maximum Drain Source Voltage Vds 100V
	Package Type SuperSO8 5 x 6
	Series ISC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.24mΩ
	Maximum Power Dissipation Pd 245W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 91nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 6.1mm
	Width 1.1 mm
	Height 5.1mm
	Automotive Standard No

OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package

ISC022N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.

Infineon’s OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones.

In the SuperSO8 package it achieves ∼20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.

Summary of Features

Compared to OptiMOS™ 5, the new technology achieves:

•∼20% lower RDS(on)

•30% improved FOMg and 40% better FOMgd

•Lower and softer reverse recovery charge (Qrr)

•Ideal for high switching frequency

•MSL 1 classified according to J-STD-020

•175 °C junction temperature rating

•High avalanche energy rating

•Pb-free lead plating

•RoHS compliant

Benefits

•Low conduction losses

•Low switching losses

•Fast turn on and off

•Less paralleling required

•Robust reliable performance

•Environmentally friendly

•Less paralleling required

수량	한팩당	릴당*
5000 - 5000	₩3,399.04	₩16,999,900.00
10000 - 10000	₩3,297.52	₩16,489,480.00
15000 +	₩3,199.76	₩15,995,040.00

Infineon ISC Type N-Channel MOSFET, 230 A, 100 V, 8-Pin SuperSO8 5 x 6 ISC022N10NM6ATMA1

OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package

Summary of Features

Benefits

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